1PS181 查看數據表（PDF） - NXP Semiconductors.

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1PS181

High-speed double diode

NXP Semiconductors. 

NXP Semiconductors

High-speed double diode

Product data sheet

1PS181

ELECTRICAL CHARACTERISTICS

Tj = 25 °C; unless otherwise specified.

SYMBOL

PARAMETER

Per diode

VF

forward voltage

IR

reverse current

Cd

diode capacitance

trr

reverse recovery time

Vfr

forward recovery voltage

CONDITIONS

TYP. MAX. UNIT

see Fig.3

IF = 1 mA

610

IF = 10 mA

740

IF = 50 mA

−

IF = 100 mA

−

see Fig.4

VR = 25 V

−

VR = 80 V

−

VR = 25 V; Tj = 150 °C

−

VR = 80 V; Tj = 150 °C

−

f = 1 MHz; VR = 0; see Fig.5

−

when switched from IF = 10 mA to

−

IR = 10 mA; RL = 100 Ω; measured

at IR = 1 mA; see Fig.6

when switched from IF = 10 mA;

−

tr = 20 ns; see Fig.7

− mV

− mV

1.0 V

1.2 V

30 nA

0.5 μA

30 μA

100 μA

2.0 pF

4 ns

1.75 V

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-tp

Rth j-a

thermal resistance from junction to tie-point

thermal resistance from junction to ambient note 1

Note

1. Device mounted on an FR4 printed-circuit board.

CONDITIONS

VALUE

250

500

UNIT

K/W

K/W

1996 Sep 03

3

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