BSZ042N06NSATMA1 查看數據表（PDF） - Infineon Technologies

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BSZ042N06NSATMA1

OptiMOS™ Power-Transistor, 60V

Infineon Technologies 

OptiMOSTMPower-Transistor,60V

BSZ042N06NS

2Maximumratings

atTj=25°C,unlessotherwisespecified

Table2Maximumratings

Parameter

Symbol

Continuous drain current

Pulsed drain current2)

Avalanche energy, single pulse3)

Gate source voltage

Power dissipation

Operating and storage temperature

ID

ID,pulse

EAS

VGS

Ptot

Tj,Tstg

Min.

-

-

-

-

-

-20

-

-

-55

Values

Typ. Max.

-

40

-

40

-

17

-

160

-

130

-

20

-

69

-

2.1

-

150

Unit Note/TestCondition

VGS=10V,TC=25°C

A VGS=10V,TC=100°C

VGS=10V,TC=25°C,RthJA=60K/W1)

A TC=25°C

mJ ID=20A,RGS=25Ω

V-

W

TC=25°C

TA=25°C,RthJA=60K/W1)

°C

IEC climatic category;

DIN IEC 68-1: 55/150/56

3Thermalcharacteristics

Table3Thermalcharacteristics

Parameter

Symbol

Thermal resistance, junction - case,

bottom

Device on PCB,

6 cm2 cooling area1)

RthJC

RthJA

Values

Unit Note/TestCondition

Min. Typ. Max.

-

1.1 1.8 K/W -

-

-

60 K/W -

1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

2) See figure 3 for more detailed information

3) See figure 13 for more detailed information

Final Data Sheet

4

Rev.2.3,2014-11-10

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