NE3511S02-T1D 查看數據表（PDF） - California Eastern Laboratories.

零件编号

产品描述 (功能)

生产厂家

NE3511S02-T1D

HETERO JUNCTION FIELD EFFECT TRANSISTOR

California Eastern Laboratories. 

HETERO JUNCTION FIELD EFFECT TRANSISTOR

NE3511S02

X TO Ku BAND SUPER LOW NOISE AMPLIFIER

N-CHANNEL HJ-FET

FEATURES

• Super low noise figure and high associated gain

NF = 0.30 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz

• Micro-X plastic (S02) package

APPLICATIONS

• X to Ku-band DBS LNB

• Other X to Ku-band communication systems

ORDERING INFORMATION

Part Number

Order Number

Package

Quantity

NE3511S02-T1C NE3511S02-T1C-A S02 (Pb-Free) 2 kpcs/reel

NE3511S02-T1D NE3511S02-T1D-A

10 kpcs/reel

Marking

Supplying Form

B

• 8 mm wide embossed taping

• Pin 4 (Gate) faces the perforation side

of the tape

Remark To order evaluation samples, contact your nearby sales office.

Part number for sample order: NE3511S02-A

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current

Gate Current

Total Power Dissipation

Channel Temperature

Storage Temperature

Symbol

Ratings

Unit

VDS

4

V

VGS

−3

V

ID

IG

Ptot Note

IDSS

100

165

mA

µA

mW

Tch

+125

°C

Tstg

−65 to +125

°C

Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

Document No. PG10642EJ01V0DS (1st edition)

Date Published October 2006 NS CP(N)

2006

Share Link: