IS45S32200L-6TLA1-TR 查看數據表（PDF） - Integrated Silicon Solution
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IS45S32200L-6TLA1-TR
Integrated Silicon Solution
IS45S32200L-6TLA1-TR Datasheet PDF : 60 Pages
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IS42S32200L, IS45S32200L
same bank.The PRECHARGE command should be issued
x cycles before the clock edge at which the last desired
data element is valid, where x equals the CAS latency
minus one. This is shown in the READ to PRECHARGE
diagram for each possible CAS latency; data element n +
3 is either the last of a burst of four or the last desired of
a longer burst. Following the PRECHARGE command, a
subsequent command to the same bank cannot be issued
until trp is met. Note that part of the row precharge time is
hidden during the access of the last data element(s).
In the case of a fixed-length burst being executed to
completion, a PRECHARGE command issued at the
optimum time (as described above) provides the same
operation that would result from the same fixed-length
burst with auto precharge. The disadvantage of the PRE-
CHARGE command is that it requires that the command
and address buses be available at the appropriate time to
issue the command; the advantage of the PRECHARGE
command is that it can be used to truncate fixed-length
or full-page bursts.
Full-page READ bursts can be truncated with the BURST
TERMINATE command, and fixed-length READ bursts
may be truncated with a BURST TERMINATE command,
provided that auto precharge was not activated.The BURST
TERMINATE command should be issued x cycles before
the clock edge at which the last desired data element is
valid, where x equals the CAS latency minus one. This is
shown in the READ Burst Termination diagram for each
possible CAS latency; data element n + 3 is the last desired
data element of a longer burst.
CAS Latency
T0
T1
T2
T3
CLK
COMMAND
DQ
READ
NOP
NOP
tAC
DOUT
tLZ
tOH
CAS Latency - 2
T0
T1
T2
T3
T4
CLK
COMMAND READ
DQ
NOP
NOP
tAC
tLZ
CAS Latency - 3
NOP
DOUT
tOH
DON'T CARE
UNDEFINED
Integrated Silicon Solution, Inc. — www.issi.com
19
Rev.A
10/17/2012
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