M29W800DB70M1 查看數據表（PDF） - STMicroelectronics

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M29W800DB70M1

8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory

STMicroelectronics 

Table 11. DC Characteristics

Symbol

Parameter

ILI

Input Leakage Current

ILO

Output Leakage Current

ICC1

Supply Current (Read)

ICC2

Supply Current (Standby)

ICC3 (1) Supply Current (Program/Erase)

VIL

Input Low Voltage

VIH

Input High Voltage

VOL

Output Low Voltage

VOH

Output High Voltage

VID

Identification Voltage

IID

Identification Current

VLKO

Program/Erase Lockout Supply

Voltage

Note: 1. Sampled only, not 100% tested.

Figure 12. Read Mode AC Waveforms

M29W800DT, M29W800DB

Test Condition

0V ≤ VIN ≤ VCC

0V ≤ VOUT ≤ VCC

E = VIL, G = VIH,

f = 6MHz

E = VCC ±0.2V,

RP = VCC ±0.2V

Program/Erase

Controller active

IOL = 1.8mA

IOH = –100µA

A9 = VID

Min

Max

Unit

±1

µA

±1

µA

10

mA

100

µA

20

mA

–0.5

0.8

V

0.7VCC

VCC +0.3

V

0.45

V

VCC –0.4

V

11.5

12.5

V

100

µA

1.8

2.3

V

A0-A18/

A–1

E

G

DQ0-DQ7/

DQ8-DQ15

BYTE

tAVQV

tAVAV

VALID

tELQV

tELQX

tGLQX

tGLQV

tBHQV

tELBL/tELBH

tAXQX

tEHQZ

tEHQX

tGHQX

tGHQZ

VALID

tBLQZ

AI05448

21/42

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