74AHCT1G126SE-7 查看數據表（PDF） - Diodes Incorporated.
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74AHCT1G126SE-7 Datasheet PDF : 9 Pages
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74AHCT1G126
SINGLE BUFFER GATE WITH 3-STATE OUTPUT
Absolute Maximum Ratings (Note 2)
Symbol
Description
Rating
Unit
ESD HBM Human Body Model ESD Protection
2
KV
ESD CDM Charged Device Model ESD Protection
1
KV
ESD MM
Machine Model ESD Protection
200
V
VCC
Supply Voltage Range
-0.5 to 6.5
V
VI
Input Voltage Range
-0.5 to 6.5
V
VO
Voltage applied to output in high or low state
-0.5 to VCC +0.5
V
IIK
Input Clamp Current VI<0
-20
mA
IOK
Output Clamp Current (VO < 0 or VO > VCC)
±20
mA
IO
Continuous output current (VO = 0 to VCC)
±25
mA
ICC
Continuous current through VCC
50
mA
IGND
Continuous current through GND
-50
mA
TJ
Operating Junction Temperature
-40 to 150
°C
TSTG
Storage Temperature
-65 to 150
°C
Notes: 2. Stresses beyond the absolute maximum may result in immediate failure or reduced reliability. These are stress values and device operation should be
within recommend values.
Recommended Operating Conditions (Note 3)
Symbol
VCC
VIH
VIL
VI
VO
IOH
IOL
Δt/ΔV
TA
Operating Voltage
High-level Input Voltage
Low-level input voltage
Input Voltage
Output Voltage
High-level output current
Low-level output current
Input transition rise or fall
rate
Operating free-air
temperature
Parameter
Notes: 3. Unused inputs should be held at VCC or Ground.
Min
Max
Unit
4.5
5.5
V
2.0
V
0.8
V
0
5.5
V
0
VCC
V
-8
mA
8
mA
20
ns/V
-40
125
ºC
74AHCT1G126
Document number: DS35187Rev. 1 - 2
3 of 9
www.diodes.com
May 2011
© Diodes Incorporated
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