180N10N 查看數據表（PDF） - Infineon Technologies
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180N10N Datasheet PDF : 9 Pages
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IPA180N10N3 G
9 Drain-source on-state resistance
R DS(on)=f(T j); I D=28 A; V GS=10 V
40
10 Typ. gate threshold voltage
V GS(th)=f(T j); V GS=V DS
parameter: I D
4
36
32
28
24
98 %
20
typ
16
12
8
4
3.5
3
350 µA
2.5
35 µA
2
1.5
1
0.5
0
-60
-20
20
60 100 140 180
T j [°C]
0
-60 -20
20
60 100 140 180
T j [°C]
11 Typ. capacitances
C =f(V DS); V GS=0 V; f =1 MHz
104
12 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
103
Ciss
103
Coss
102
Crss
101
102
175 °C
25 °C
175 °C, 98%
25 °C, 98%
101
0
Rev. 2.2
20
40
60
V DS [V]
100
80
0
page 6
0.5
1
1.5
V SD [V]
2
2009-07-09
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