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M1A3P250-PQG208Y 查看數據表(PDF) - Microsemi Corporation

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M1A3P250-PQG208Y
Microsemi
Microsemi Corporation Microsemi
M1A3P250-PQG208Y Datasheet PDF : 212 Pages
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ProASIC3 DC and Switching Characteristics
Power Consumption of Various Internal Resources
Table 2-14 • Different Components Contributing to Dynamic Power Consumption in ProASIC3 Devices
Device Specific Dynamic Contributions
(µW/MHz)
Parameter
Definition
PAC1
Clock contribution of a Global Rib
14.50 12.80 12.80 11.00 11.00 9.30 9.30 9.30
PAC2
Clock contribution of a Global Spine
2.48 1.85 1.35 1.58 0.81 0.81 0.41 0.41
PAC3
Clock contribution of a VersaTile row
0.81
PAC4
Clock contribution of a VersaTile used as a
0.12
sequential module
PAC5
First contribution of a VersaTile used as a
0.07
sequential module
PAC6
Second contribution of a VersaTile used as a
0.29
sequential module
PAC7
Contribution of a VersaTile used as a
0.29
combinatorial Module
PAC8
Average contribution of a routing net
0.70
PAC9
Contribution of an I/O input pin (standard
dependent)
See Table 2-8 on page 2-6 through
Table 2-10 on page 2-7.
PAC10
Contribution of an I/O output pin (standard
dependent)
See Table 2-11 on page 2-8 through
Table 2-13 on page 2-9.
PAC11
Average contribution of a RAM block during a
read operation
25.00
PAC12
Average contribution of a RAM block during a
write operation
30.00
PAC13
Dynamic contribution for PLL
2.60
Note: *For a different output load, drive strength, or slew rate, Microsemi recommends using the Microsemi Power
spreadsheet calculator or SmartPower tool in Libero SoC software.
2-10
Revision 14

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