ACS108-5SA-AP 查看數據表（PDF） - STMicroelectronics
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ACS108-5SA-AP Datasheet PDF : 8 Pages
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Fig. 5: Maximum power dissipation versus RMS
on-state current.
ACS108-5Sx
Fig. 6: RMS on-state current versus ambient
temperature.
P(W)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
IT(RMS)(A)
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
IT(RMS)(A)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
ACS108-5SA (TO92, Tamb=Tlead)
ACS108-5SN with 5cm² copper surface under tab
ACS108-5SA (TO92)
Tamb(°C)
10 20 30 40 50 60 70 80 90 100 110 120 130
Fig. 7-1: Relative variation of thermal impedance
junction to ambient versus pulse duration
(ACS108-5SA) (TO-92).
Fig. 7-2: Relative variation of thermal impedance
junction to ambient versus pulse duration
(ACS108-5SN) (SOT-223).
Zth(j-a) / Rth(j-a)
1.00
Zth(j-a) / Rth(j-a)
1.00
0.10
0.10
0.01
1E-3
1E-2
tp(s)
1E-1 1E+0
1E+1
1E+2 5E+2
0.01
1E-3
1E-2
tp(s)
1E-1 1E+0
1E+1
1E+2 5E+2
Fig. 8: Relative variation of gate trigger current
versus junction temperature.
Fig. 9: Relative variation of holding and latching
current versus junction temperature.
IGT [Tj] / IGT [Tj=25°C]
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-40 -20 0
Tj(°C)
20 40 60 80 100 120 140
IH,IL [Tj] / IH,IL [Tj=25°C]
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
Tj(°C)
0.0
-40 -20 0
20 40 60
80 100 120 140
5/8
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