ESDALC5-1BF4 查看數據表（PDF） - STMicroelectronics

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ESDALC5-1BF4

Low clamping and low capacitance bidirectional single line ESD protection

STMicroelectronics 

Characteristics

1

Characteristics

ESDALC5-1BF4

Table 1. Absolute maximum ratings

Symbol

Parameter

VPP (1) Peak pulse voltage

IEC 61000-4-2 contact discharge

IEC 61000-4-2 air discharge

PPP(1)

IPP(1)

Peak pulse power (8/20 µs)

Peak pulse current (8/20 µs)

Tj

Operating junction temperature range

Tstg

Storage temperature range

TL

Maximum lead temperature for soldering during 10 s

1. For a surge greater than the maximum values, the diode will fail in short-circuit.

Value

Unit

16

kV

30

28

W

2.5

A

-40 to 150

°C

-65 to +150

°C

260

°C

Figure 2. Electrical characteristics (definitions)

Symbol

VBR

=

IRM

=

VRM

=

IPP

=

Rd

=

αT =

C LINE =

Parameter

Breakdown voltage

Leakage current at VRM

Stand-off voltage

Peak pulse current

Dynamic resistance

Voltage temperature coefficient

Line capacitance

Slope: 1/Rd

IPP

Symbol

VBR

IRM

CLINE

Table 2. Electrical characteristics (values, Tamb = 25 °C)

Test conditions

Value

Unit

Min. Typ. Max.

IR = 1 mA

VRM = 5 V

VLINE= 0 V, F = 1 MHz, VOSC = 30 mV

5.8

V

100 nA

10 12 pF

2/10

DocID024341 Rev 1

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