ESDALC5-1BF4 查看數據表（PDF） - STMicroelectronics

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ESDALC5-1BF4

Low clamping and low capacitance bidirectional single line ESD protection

STMicroelectronics 

ESDALC5-1BF4

Characteristics

Figure 3. Leakage current versus junction

temperature (typical values)

Figure 4. Junction capacitance versus applied

voltage (typical values)

IR ( nA)

100

10

1

0.1

25

50

VR = VRM = 5 V

IO/IO

C (pF)

16

14

12

Tj = 25°C

F = 1 MHz

VOSC = 30 mV

IO/IO

10

8

6

4

2

Tj (°C)

0

VR (V)

75

100

125

150

0

1

2

3

4

5

6

Figure 5. ESD response to IEC 61000-4-2

(+8 kV contact discharge)

Figure 6. ESD response to IEC 61000-4-2

(-8 kV contact discharge)

5 V/div

1 30 V

22 14 V

3 12 V

5 V/div

1 VCL: Peak clamping voltage

2 VCL :clamping voltage at 30 ns

3 VCL :clamping voltage at 60 ns

4 VCL :clamping voltage at 100 ns

4 10 V

20 ns/div

2 -15 V

3 -13 V

1 -31 V

4 -10 V

1 VCL: Peak clamping voltage

2 VCL :clamping voltage at 30 ns

3 VCL :clamping voltage at 60 ns

4 VCL :clamping voltage at 100 ns

20 ns/div

Figure 7. Dynamic resistance

IPP (A)

30

25

20

15

10

5

0

0

Positive

polarity

Negative

polarity

VCL (V)

5

10

15

20

Figure 8. S21 attenuation measurement result

S21(dB)

0

-3

-6

-9

-12

-15

-18

-21

-24

-27

-30

-33

-36

100k

1M

10M

ESDALC5-1BF4

100M

F(Hz)

1G

10G

DocID024341 Rev 1

3/10

10

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