MAX3395E 查看數據表（PDF） - Maxim Integrated

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MAX3395E

±15kV ESD-Protected, High-Drive Current, Dual-/Quad-/Octal-Level Translators with Speed-Up Circuitry

Maxim Integrated 

±15kV ESD-Protected, High-Drive Current, Dual-/Quad-/

Octal-Level Translators with Speed-Up Circuitry

RC

1MΩ

RD

1500Ω

CHARGE-CURRENT-

LIMIT RESISTOR

DISCHARGE

RESISTANCE

HIGH-

VOLTAGE

DC

SOURCE

Cs

100pF

STORAGE

CAPACITOR

DEVICE-

UNDER-

TEST

Figure 6a. Human Body ESD Test Model

The high-impedance state of the I/O lines during tri-

state output mode facilitates use in multidrop networks.

In tri-state output mode, do not exceed (VL + 0.3V) on

I/O VL_ or (VCC + 0.3V) on I/O VCC_.

Thermal-Shutdown Protection

The MAX3394E/MAX3395E/MAX3396E are protected

from thermal damage resulting from short-circuit faults.

In the event of a short-circuit fault, when the junction

temperature (TJ) reaches +125°C, a thermal sensor

forces the device into the tri-state output mode. When

TJ drops below +115°C, normal operation resumes.

±15kV ESD Protection

As with all Maxim devices, ESD-protection structures are

incorporated on all pins to protect against ESD encoun-

tered during handling and assembly. The I/O VCC_ lines

are further protected by advanced ESD structures to

guard these pins from damage caused by ESD of up to

±15kV. Protection structures prevent damage caused by

ESD events in normal operation, tri-state output mode,

and when the device is unpowered. After arresting an

ESD event, MAX3394E/MAX3395E/MAX3396E continue

to function without latching up, whereas competing

devices can enter a latched-up state and must be power

cycled to restore functionality.

Several ESD testing standards exist for gauging the

robustness of ESD structures. The ESD protection of

the MAX3394E/MAX3395E/MAX3396E is characterized

for the human body model (HBM). Figure 6a shows the

model used to simulate an ESD event resulting from

contact with the human body. The model consists of a

100pF storage capacitor that is charged to a high volt-

age then discharged through a 1.5kΩ resistor. Figure

6b shows the current waveform when the storage

capacitor is discharged into a low impedance.

IP 100%

90%

AMPERES

36.8%

10%

0

0 tRL

Ir

PEAK-TO-PEAK RINGING

(NOT DRAWN TO SCALE)

TIME

tDL

CURRENT WAVEFORM

Figure 6b. HBM Discharge Current Waveform

To ensure full ±15kV ESD protection, bypass VCC to

ground with a 0.1µF ceramic capacitor and an additional

1µF ceramic capacitor as close to the device as possible.

ESD Test Conditions

ESD performance depends on a variety of conditions.

Contact Maxim for a reliability report documenting test

setup, methodology, and results.

Applications Information

Power-Supply Decoupling

Bypass VL and VCC to ground with 0.1µF ceramic

capacitors. To ensure full ±15kV ESD protection,

bypass VCC to ground with an additional 1µF or greater

ceramic capacitor. Place all capacitors as close to the

device as possible.

Open-Drain Mode vs. Push-Pull Mode

The MAX3394E/MAX3395E/MAX3396E are compatible

with push-pull (active) and open-drain drivers. For push-

pull operation, maximum data rate is guaranteed to

6Mbps. For open-drain applications, the MAX3394E/

MAX3395E/MAX3396E include internal pullup resistors

and slew-rate enhancement circuitry, providing a maxi-

mum data rate of 1Mbps. External pullup resistors can

be added to increase data rate when the bus is loaded

by high capacitance. (See the Use of External Pullup

Resistors section.)

Serial-Interface Level Translation

The MAX3395E provides level translation on four I/O

lines, making it an ideal device for multivoltage I2C,

MICROWIRE, and SPI serial interfaces.

Use of External Pullup Resistors

The MAX3394E/MAX3395E/MAX3396E include internal

10kΩ pullup resistors. During a low-to-high logic transi-

tion, the internal pullup resistors charge the bus capac-

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