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IPB072N15N3G 查看數據表(PDF) - Infineon Technologies
零件编号
产品描述 (功能)
生产厂家
IPB072N15N3G
OptiMOS®3 Power-Transistor
Infineon Technologies
IPB072N15N3G Datasheet PDF : 11 Pages
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13 Avalanche characteristics
I
AS
=f(
t
AV
);
R
GS
=25
Ω
parameter:
T
j(start)
1000
100
10
25 °C
100 °C
125 °C
IPB072N15N3 G IPP075N15N3 G
IPI075N15N3 G
14 Typ. gate charge
V
GS
=f(
Q
gate
);
I
D
=100 A pulsed
parameter:
V
DD
10
120 V
8
75 V
6
30 V
4
2
1
1
10
100
t
AV
[µs]
15 Drain-source breakdown voltage
V
BR(DSS)
=f(
T
j
);
I
D
=1 mA
0
1000
0
20
40
60
80
Q
gate
[nC]
16 Gate charge waveforms
170
V
GS
165
160
155
150
V
g s(th)
145
140
Q
g(th)
135
-60 -20
20
60 100 140 180
T
j
[°C]
Q
gs
Rev. 2.03
page 7
Q
g
Q
sw
Q
gd
Q
gate
2008-07-15
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