NDD05N50Z 查看數據表（PDF） - ON Semiconductor

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NDD05N50Z

N-Channel Power MOSFET 500 V, 1.25 Ω

ON Semiconductor 

NDF05N50Z, NDP05N50Z, NDD05N50Z

TYPICAL CHARACTERISTICS

10

50% (DUTY CYCLE)

1 20%

10%

5.0%

2.0%

1.0%

0.1

SINGLE PULSE

0.01

1E−06

10

1E−05

1E−04

1E−03

1E−02

1E−01

1E+00

1E+01

PULSE TIME (s)

Figure 12. Thermal Impedance (Junction−to−Case) for NDF05N50Z

RqJC = 4.4°C/W

Steady State

1E+02 1E+03

1 50% (DUTY CYCLE)

20%

10%

0.1 5.0%

2.0%

1.0%

SINGLE PULSE

0.01

1E−06

1E−05

1E−04

1E−03

1E−02

1E−01

1E+00

1E+01

PULSE TIME (s)

Figure 13. Thermal Impedance (Junction−to−Case) for NDD05N50Z

RqJC = 1.5°C/W

Steady State

1E+02 1E+03

100

10 50% (DUTY CYCLE)

20%

10%

1 5.0%

2.0%

1.0%

0.1

0.01

1E−06

SINGLE PULSE

1E−05

1E−04

1E−03

1E−02

1E−01

1E+00

1E+01

PULSE TIME (s)

Figure 14. Thermal Impedance (Junction−to−Ambient) for NDD05N50Z

RqJA = 38°C/W

Steady State

1E+02 1E+03

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