FDD6782A 查看數據表（PDF） - Fairchild Semiconductor
零件编号
产品描述 (功能)
生产厂家
FDD6782A Datasheet PDF : 6 Pages
| |||
Typical Characteristics TJ = 25 °C unless otherwise noted
10
ID = 14.9 A
8
6
4
VDD = 10 V
VDD = 13 V
VDD = 16 V
2
0
0
3
6
9
12
15
18
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
2000
1000
Ciss
Coss
f = 1 MHz
VGS = 0 V
100
0.1
1
Crss
10
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain
to Source Voltage
30
50
TJ = 125 oC
10
TJ = 25 oC
TJ = 150 oC
1
0.001 0.01
0.1
1
10
100
tAV, TIME IN AVALANCHE (ms)
Figure 9. Unclamped Inductive
Switching Capability
40
30
VGS = 10 V
20
Limited by Package
10
RθJC = 4.8 oC/W
VGS = 4.5 V
0
25
50
75 100 125 150 175
Tc, CASE TEMPERATURE (oC)
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
200
100
10 us
10
1
0.1
0.1
100 us
THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
RθJC = 4.8 oC/W
TC = 25 oC
1 ms
10 ms
100 ms
1s
1
10
70
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
2000
1000
VGS = 10 V
100
SINGLE PULSE
RθJC = 4.8 oC/W
TC = 25 oC
20
10-5
10-4
10-3
10-2
10-1
100
10
t, PULSE WIDTH (sec)
Figure 12. Single Pulse Maximum
Power Dissipation
©2009 Fairchild Semiconductor Corporation
4
FDD6782A Rev.C
www.fairchildsemi.com
Share Link: 