DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

LR24C256D 查看數據表(PDF) - Leshan Radio Company,Ltd

零件编号
产品描述 (功能)
生产厂家
LR24C256D Datasheet PDF : 14 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
LESHAN RADIO COMPANY, LTD.
3. Device Addressing
The 128K/256K EEPROM devices all require an 8-bit device address word following a start condition to
enable the chip for a read or write operation (see Figure 4).
The device address word consists of a mandatory “1”, “0” sequence for the first four most significant bits
as shown. This is common to all the Serial EEPROM devices.
The 128K/256K uses the three device address bits A1, A0 to allow as many as four devices on the same
bus. These bits must compare to their corresponding hardwired input pins. The A1 and A0 pins use an
internal proprietary circuit that biases them to a logic low condition if the pins are allowed to float.
The eighth bit of the device address is the read/write operation select bit. A read operation is initiated if
this bit is high and a write operation is initiated if this bit is low.
Upon a compare of the device address, the EEPROM will output a “0”. If a compare is not made, the chip
will return to a standby state.
DATA SECURITY: The LR24C128/LR24C256 has a hardware data protection scheme that allows the
user to write protect the entire memory when the WP pin is at VCC.
4. Write Operations
BYTE WRITE: A write operation requires two 8-bit data word address following the device address word
and acknowledgment. Upon receipt of this address, the EEPROM will again respond with a “0” and then
clock in the first 8-bit data word. Following receipt of the 8-bit data word, the EEPROM will output a “0”
and the addressing device, such as a microcontroller, must terminate the write sequence with a stop
condition. At this time the EEPROM enters an internally timed write cycle, tWR, to the nonvolatile memory.
All inputs are disabled during this write cycle and the EEPROM will not respond until the write is
complete (see Figure 5).
PAGE WRITE: The 128K/256K devices are capable of 64-byte page writes.
A page write is initiated the same as a byte write, but the microcontroller does not send a stop condition
after the first data word is clocked in. Instead, after the EEPROM acknowledges receipt of the first data
word, the microcontroller can transmit up to 63 more data words. The EEPROM will respond with a “0”
after each data word received. The microcontroller must terminate the page write sequence with a stop
condition (see Figure 6).
The data word address lower six (128K/256K) bits are internally incremented following the receipt of
each data word. The higher data word address bits are not incremented, retaining the memory page row
location. When the word address, internally generated, reaches the page boundary, the following byte is
placed at the beginning of the same page. If more than 64 data words are transmitted to the EEPROM,
the data word address will “roll over” and previous data will be overwritten.
ACKNOWLEDGE POLLING: Once the internally timed write cycle has started and the EEPROM inputs
are disabled, acknowledge polling can be initiated. This involves sending a start condition followed by
the device address word. The read/write bit is representative of the operation desired. Only if the internal
write cycle has completed will the EEPROM respond with a “0”, allowing the read or write sequence to
continue.
5. Read Operations
Read operations are initiated the same way as write operations with the exception that the read/write
select bit in the device address word is set to “1”. There are three read operations: current address read,
random address read and sequential read.
5

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]