40N60 查看數據表（PDF） - IXYS CORPORATION
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40N60 Datasheet PDF : 6 Pages
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IXSH 40N60 IXSM 40N60
IXSH 40N60A IXSM 40N60A
Fig.7 Turn-Off Energy per Pulse and
Fall Time on Collector Current
1000
12
TJ = 125°C
RG = 10Ω
750
9
Eoff (-A)
hi-speed
500
6
250
tfi (-A)
hi-speed
3
Fig.8 Dependence of Turn-Off Energy
Per Pulse and Fall Time on R
G
1000
10
TJ = 125°C
IC = 40A
800
8
Eoff (-A), hi-speed
600
6
400
4
tfi (-A), hi-speed
200
2
0
0
0 10 20 30 40 50 60 70 80
IC - Amperes
Fig.9 Gate Charge Characteristic Curve
15
IC = 40A
VCE = 480V
12
9
6
3
0
0
0
10
20
30
40
50
RG - Ohms
Fig.10 Turn-Off Safe Operating Area
100
10
TJ = 125°C
RG = 22Ω
dV/dt < 6V/ns
1
0.1
0
0
50
100 150 200 250
Qg- nCoulombs
Fig.11 Transient Thermal Impedance
0.01
0
100 200 300 400 500 600 700
VCE - Volts
1
D=0.5
0.1 D=0.2
D=0.1
D=0.05
D=0.02
0.01 D=0.01
D = Duty Cycle
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: 408-982-0700, Fax: 408-496-0670
Time - Seconds
0.1
1
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
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