STP10NM60ND 查看數據表（PDF） - STMicroelectronics

零件编号

产品描述 (功能)

生产厂家

STP10NM60ND

N-channel 600 V, 0.57 Ω, 8 A, DPAK, TO-220FP, TO-220 FDmesh™ II Power MOSFET (with fast diode)

STMicroelectronics 

STD10NM60ND, STF10NM60ND, STP10NM60ND

Electrical characteristics

Table 8.

Symbol

Source drain diode

Parameter

Test conditions

ISD

ISDM (1)

VSD (2)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

ISD = 8 A, VGS = 0

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 8 A, di/dt = 100 A/µs

VDD= 60 V

(see Figure 20)

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 8 A, di/dt = 100 A/µs

VDD= 60 V TJ = 150 °C

(see Figure 20)

1. Pulse width limited by safe operating area.

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Min. Typ. Max Unit

8A

-

32 A

-

1.5 V

118

ns

- 680

nC

11

A

150

ns

- 918

nC

12

A

Doc ID 18467 Rev 2

5/19

Share Link: