2SK3339-01 查看數據表（PDF） - Fuji Electric
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2SK3339-01 Datasheet PDF : 4 Pages
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2SK3339-01
Characteristics
Allowable Power Dissipation
PD=f(Tc)
500
400
300
200
100
0
0
25
50
75
100
125
150
Tc [°C]
Typical Output Characteristics
ID=f(VDS):80µs pulse test,Tch=25°C
60
20V 10V
50
15V 6.5V 6.0V
40
5.5V
30
20
5.0V
10
4.5V
VGS=4.0V
0
0
2
4
6
8
10
12
14
16
VDS [V]
Typical Transconductance
gfs=f(ID):80µs pulse test,VDS=25V,Tch=25°C
100
10
1
0.1
0.1
1
10
100
ID [A]
FUJI POWER MOSFET
Safe operating area
ID=f(VDS):Single Pulse,Tc=25°C
t=
102
1µs
10µs
D.C.
101
100
10-1
100
t
t
D=
T
T
101
102
VDS [V]
100µs
1ms
10ms
100ms
103
Typical Transfer Characteristic
ID=f(VGS):80µs pulse test,VDS=25V,Tch=25°C
100
10
1
0.1
0
1
2
3
4
5
6
7
8
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs pulse test,Tch=25°C
0.6
VGS=4.5V
0.5
5.0V
0.4
5.5V
0.3
6.0V
6.5V
0.2
10V
15V
20V
0.1
0.0
0
10
20
30
40
50
60
ID [A]
2
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