2N6342 查看數據表（PDF） - Motorola => Freescale
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2N6342 Datasheet PDF : 6 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Triacs
Silicon Bidirectional Triode Thyristors
. . . designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
• Blocking Voltage to 800 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
• Gate Triggering Guaranteed in Two Modes (2N6342, 2N6343, 2N6344, 2N6345)
or Four Modes (2N6346, 2N6347, 2N6348, 2N6349)
• For 400 Hz Operation, Consult Factory
• 12 Ampere Devices Available as 2N6342A thru 2N6349A
Order this document
by 2N6342/D
2N6342
thru
2N6349
TRIACs
8 AMPERES RMS
200 thru 800 VOLTS
MT1
MT2
G
CASE 221A-04
(TO-220AB)
STYLE 4
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating
*Peak Repetitive Off-State Voltage(1)
(Gate Open, TJ = –40 to +110°C)
1/2 Sine Wave 50 to 60 Hz, Gate Open
2N6342, 2N6346
2N6343, 2N6347
2N6344, 2N6348
2N6345, 2N6349
Symbol
VDRM
Value
200
400
600
800
Unit
Volts
*RMS On-State Current
Full Cycle Sine Wave 50 to 60 Hz
(TC = +80°C)
(TC = +90°C)
IT(RMS)
8
4
Amps
*Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz, TC = +80°C)
Preceded and followed by Rated Current
Circuit Fusing
(t = 8.3 ms)
ITSM
100
Amps
I2t
40
A2s
*Peak Gate Power (TC = +80°C, Pulse Width = 2 µs)
PGM
20
Watts
*Average Gate Power (TC = +80°C, t = 8.3 ms)
PG(AV)
0.5
Watt
*Peak Gate Current
IGM
2
Amps
*Peak Gate Voltage
VGM
10
Volts
*Operating Junction Temperature Range
TJ
–40 to +125
°C
*Storage Temperature Range
Tstg
–40 to +150
°C
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
REV 1
Motorola Thyristor Device Data
1
© Motorola, Inc. 1995
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