3845GMTR-E1 查看數據表（PDF） - BCD Semiconductor

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3845GMTR-E1

GREEN MODE PWM CONTROLLER

BCD Semiconductor 

Data Sheet

GREEN MODE PWM CONTROLLER

Electrical Characteristics (Continued)

AP384XG

Parameter

Symbol

ERROR AMPLIFIER SECTION

Conditions

Input Voltage

Output Sink Current

Output Source Current

High Output Voltage

Low Output Voltage

Voltage Gain

Power Supply Rejection Ratio

CURRENT SENSE SECTION

VI

ISINK

ISOURCE

VOH

VOL

PSRR

VCOMP=2.5V

VCOMP=1.1V

VCOMP=5V

RL=15kΩ to GND

RL=15kΩ to pin REF

2V ≤ VO ≤ 4V

12V ≤ VCC ≤ 25V

Maximum Input Signal

Gain

Power Supply Rejection Ratio

Delay to Output

Input Bias Current

Leading Edge Blanking Duration

OUTPUT SECTION

VI(MAX)

GV

PSRR

IBIAS

TLEB

VCOMP=5V (Note 5)

0V ≤ VCS ≤ 4V (Note 5, 6)

12V ≤ VCC ≤ 25V (Note 5, 7)

VCS= 0 to 2V (Note 7)

VOUTPUT=High

Low Output Voltage

VOL

ISINK = 20mA

ISINK = 200mA

High Output Voltage

VOH

ISOURCE = 20mA

ISOURCE = 200mA

Rise Time

tR

Fall Time

tF

SKIP CYCLE MODE SECTION

TJ=25oC, CL=1nF

TJ=25oC, CL=1nF

Source Current (@ CS)

VOUTPUT=Low, TJ=25oC

OVER-TEMPERATURE PROTECT SECTION

Shutdown Temperature

Temperature Hysteresis

TSHUT

THYS

Min Typ Max Unit

2.45 2.50 2.55

V

6

10

mA

-0.5 -0.8

mA

5

7

V

0.7 1.1

V

65

90

dB

60

70

dB

0.9

1

1.1

V

2.85 3 3.15 V/V

70

dB

150 250

ns

-3

-10

µA

250

ns

0.2 0.4

V

1.4 2.2

V

13 13.5

V

12

13

V

150 250

ns

50 150

ns

180 200 220

µA

155

oC

25

oC

Note 5: Parameters are tested at trip point of latch with Vpin2 = 0.

Note 6: Here gain is defined as:

∆VPin 1

A=

, 0 ≤ Vpin3 ≤ 0.8V

∆VPin 3

Note 7: These parameters, although guaranteed, are not 100% tested in production.

Aug. 2005 Rev. 1. 2

BCD Semiconductor Manufacturing Limited

6

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