STI24N60M2 查看數據表（PDF） - STMicroelectronics

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STI24N60M2

N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus™ low Qg Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages

STMicroelectronics 

Electrical characteristics

STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2

Figure 14. Source-drain diode forward

characteristics

VSD

(V)

1.4

AM15468v1

1.2

TJ=-50°C

1

0.8

0.6

TJ=150°C

TJ=25°C

0.4

0.2

0

0 2 4 6 8 10 12 14 16 ISD(A)

Figure 15. Normalized BVDSS vs temperature

VDS

(norm)

1.11

1.09

ID = 1mA

AM15466v1

1.07

1.05

1.03

1.01

0.99

0.97

0.95

0.93

-50 -25 0

25 50 75 100 TJ(°C)

8/22

DocID023964 Rev 4

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