K2367 查看數據表（PDF） - NEC => Renesas Technology

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K2367

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

NEC => Renesas Technology 

DATA SHEET

MOS FIELD EFFECT TRANSISTORS

2SK2367/2SK2368

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

The 2SK2367/2SK2368 is N-Channel MOS Field Effect Transistor

designed for high voltage switching applications.

FEATURES

• Low On-Resistance

2SK2367: RDS (on) = 0.5 Ω (VGS = 10 V, ID = 8.0 A)

2SK2368: RDS (on) = 0.6 Ω (VGS = 10 V, ID = 8.0 A)

• Low Ciss Ciss = 1 600 pF TYP.

• High Avalanche Capability Ratings

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Drain to Source Voltage (2SK2367/2SK2368) VDSS 450/500 V

Gate to Source Voltage

VGSS

±30

V

Drain Current (DC)

ID (DC)

±15

A

Drain Current (pulse)*

ID (pulse) ±60

A

Total Power Dissipation (Tc = 25 ˚C)

PT1

120

W

Total Power Dissipation (TA = 25 ˚C)

PT2

3.0

W

Channel Temperature

Tch

150

˚C

Storage Temperature

Tstg –55 to +150 ˚C

Single Avalanche Current**

IAS

15

A

Single Avalanche Energy**

EAS

161 mJ

* PW ≤ 10 µs, Duty Cycle ≤ 1 %

** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0

PACKAGE DIMENSIONS

(in millimeter)

15.7 MAX. 3.2±0.2

4.7 MAX.

1.5

4

123

2.2±0.2

5.45

1.0±0.2 0.6±0.1 2.8±0.1

5.45

1. Gate

2. Drain

3. Source

4. Fin (Drain)

MP-88

Drain

Gate

Body

Diode

Source

Document No. TC-2506

(O. D. No. TC-8065)

Date Published December 1994 P

Printed in Japan

©

19954

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