K2367 查看數據表（PDF） - NEC => Renesas Technology
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K2367 Datasheet PDF : 8 Pages
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2SK2367/2SK2368
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC
Drain to Source On-Resistance
Gate to Source Cutoff Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
SYMBOL
RDS (on)
MIN.
VGS (off)
2.5
| yfs |
5.0
IDSS
IGSS
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
QG
QGS
QGD
VF (S-D)
trr
Qrr
TYP.
0.4
0.5
MAX.
0.5
0.6
3.5
1 600
300
30
30
40
70
25
43
10
20
1.0
400
1.8
100
±100
UNIT
Ω
V
S
µA
nA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
µC
TEST CONDITIONS
VGS = 10 V 2SK2367
ID = 8.0 A 2SK2368
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 8.0 A
VDS = VDSS, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V
VGS = 0
f = 1 MHz
ID = 8.0 A
VGS = 10 V
VDD = 150 V
RG = 10 Ω RL = 18.8 Ω
ID = 15 A
VDD = 400 V
VGS = 10 V
IF = 15 A, VGS = 0
IF = 15 A, VGS = 0
di/dt = 50 A/µs
Test Circuit 1 Avalanche Capability
Test Circuit 2 Switching Time
D.U.T.
RG = 25 Ω
L
PG.
50 Ω
VDD
VGS = 20 - 0 V
D.U.T.
PG.
RG
RG = 10 Ω
IAS
ID
VDD
BVDSS
VDS
Starting Tch
VGS
0
t
t = 1 us
Duty Cycle ≤ 1 %
Test Circuit 3 Gate Charge
RL
VGS
VGS
Wave Form
0 10 %
VDD
ID
VGS (on)
90 %
ID
Wave Form
0 10 %
td (on)
ID
tr
td (off)
90 %
90 %
10 %
tf
ton
toff
D.U.T.
IG = 2 mA
RL
PG.
50 Ω
VDD
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
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