BU508AF 查看數據表（PDF） - Philips Electronics
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BU508AF Datasheet PDF : 7 Pages
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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU508AF
+ 50v
100-200R
Horizontal
Oscilloscope
Vertical
100R
1R
6V
30-60 Hz
Fig.1. Test circuit for VCEOsust.
IC / mA
250
200
100
0
VCE / V
min
VCEOsust
Fig.2. Oscilloscope display for VCEOsust.
TRANSISTOR
IC
DIODE
ICsat
t
IB
VCE
20us
26us
64us
IBend
t
t
Fig.3. Switching times waveforms.
ICsat
90 %
IC
ts
IB
IBend
10 %
tf
t
t
- IBM
Fig.4. Switching times definitions.
+ 150 v nominal
adjust for ICsat
1mH
IBend
-VBB
LB
D.U.T.
BY228
12nF
Fig.5. Switching times test circuit.
h FE
100
BU508AD
10
1
0.1
Fig.6.
1
10
IC/A
Typical DC current gain. hFE = f (IC)
parameter VCE
July 1998
3
Rev 1.200
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