UPA2732UT1A 查看數據表（PDF） - NEC => Renesas Technology
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UPA2732UT1A Datasheet PDF : 6 Pages
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μ PA2732UT1A
ELECTRICAL CHARACTERISTICS (TA = 25°C, All terminals are connected.)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
Input Capacitance
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
VDS = −30 V, VGS = 0 V
VGS = m20 V, VDS = 0 V
VDS = −10 V, ID = −1 mA
VDS = −10 V, ID = −20 A
VGS = −10 V, ID = −20 A
VGS = −4.5 V, ID = −20 A
VDS = −10 V
−1.0
30
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Crss
f = 1 MHz
td(on)
VDD = −15 V, ID = −20 A
tr
VGS = −10 V
Turn-off Delay Time
td(off)
RG = 10 Ω
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage Note
tf
QG
QGS
QGD
VF(S-D)
VDD = −24 V
VGS = −10 V
ID = −40 A
IF = 40 A, VGS = 0 V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 40 A, VGS = 0 V
Qrr
di/dt = 50 A/μs
Note Pulsed
TYP.
3.1
4.3
3280
1310
560
14
15
680
440
133
14
41
0.85
88
59
MAX.
−1
m100
−2.5
3.7
6.7
1.2
UNIT
μA
nA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
L
PG.
50 Ω
VDD
VGS = −20 → 0 V
−
IAS BVDSS
VDS
ID
VDD
Starting Tch
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG
PG.
VGS(−)
0
τ
τ = 1 μs
Duty Cycle ≤ 1%
RL
VDD
VGS(−)
VGS
Wave Form
10%
0
VDS(−)
90%
VDS
VDS
Wave Form 0
td(on)
VGS
90%
90%
10% 10%
tr td(off)
tf
ton
toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = −2 mA
RL
PG.
50 Ω
VDD
2
Data Sheet G17641EJ1V1DS
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