SVD8N80F 查看數據表（PDF） - Silan Microelectronics
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SVD8N80F Datasheet PDF : 8 Pages
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SVD8N80T/F_Datasheet
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current Pulsed
Power Dissipation(TC=25°C)
-Derate above 25°C
Single Pulsed Avalanche Energy (Note 1)
Operation Junction Temperature
Storage Temperature
Symbol
VDS
VGS
ID
IDM
PD
EAS
TJ
Tstg
Rating
SVD8N80T
SVD8N80F
800
±30
8.0
35
180
59
1.44
0.48
402
-55～+150
-55～+150
Unit
V
V
A
A
W
W/°C
mJ
°C
°C
THERMAL CHARACTERISTICS
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Rating
SVD8N80T
SVD8N80F
0.7
2.0
62.5
120
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted)
Parameter
Drain -Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Static Drain- Source On State
Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
Test conditions
VGS=0V, ID=250µA
VDS=800V, VGS=0V
VGS=±30V, VDS=0V
VGS= VDS, ID=250µA
RDS(on) VGS=10V, ID=4A
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDS=25V,VGS=0V,
f=1.0MHz
VDD=400V,ID=8.0A,
RG=25Ω
(Note 2,3)
VDS=640V,ID=8.0A,
VGS=10V
(Note 2,3)
Min.
800
--
--
2.5
Typ.
--
--
--
--
Max.
--
10
±100
4.5
Unit
V
µA
nA
V
--
1.3 1.55 Ω
-- 1354 2020
--
112 171 pF
--
11
18
--
39.6 87
--
76 240
ns
--
82.2 135
--
43.8 145
--
32.2 45
--
7.66
--
nC
-- 15.27 --
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.1
2010.10.20
Page 2 of 8
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