SDB1060D 查看數據表（PDF） - Kodenshi Auk Co., LTD
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SDB1060D Datasheet PDF : 5 Pages
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Absolute Maximum Ratings (Limiting Values)
Characteristic
Maximum repetitive reverse voltage
Maximum working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load per diode
Storage temperature range
Maximum operating junction temperature
SDB1060D
Symbol
VRRM
VRWM
VR
IF(AV)
Value
Unit
60
V
10
A
IFSM
120
A
Tstg
-45℃ to +150℃ ℃
TJ
150
℃
Thermal Characteristics
Characteristic
Maximum thermal resistance junction to case
Symbol
Rth(j-c)
Value
4.0
Unit
℃/W
Electrical Characteristics
Characteristic
Symbol
Peak forward voltage drop
VFM (1)
Reverse leakage current
IRM (1)
Junction capacitance
Cj
Note : (1) Pulse test : tP≤380 ㎲, Duty cycle≤2%
Test Condition
IFM = 10A
VR = VRRM
Tj=25℃
Tj=125℃
Tj=25℃
Tj=125℃
VR = 4VDC, f=1MHz
Min. Typ. Max. Unit
-
0.55 0.65
V
-
0.50 0.55
V
-
-
1.5 mA
-
-
200 mA
-
400
-
pF
To evaluate the conduction losses use the following equation: PF = 0.35 IF(AV) + 0.019 IF2(RMS)
IFM
2 IF(AV)
IF(AV)
Forward Voltage : VFM = Vto + rd IFM
rd
Conduction Loss : PF = Vto IF(AV) + rd IF2(RMS)
VFM
Vto
KSD-D6O003-002
2
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