Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.11
1.08
1.02
Figure 8. On-Resistance Variation
vs. Temperature
2.5
2.0
1.5
0.96
0.90
-80
*Notes:
1. VGS = 0V
2. ID = 10mA
-40
0
40 80 120 160
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
300
100
10
1
0.1
0.1
10μs
Operation in This Area
is Limited by R DS(on)
100μs
1ms
10ms
DC
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
1
10
100
VDS, Drain-Source Voltage [V]
1000
Figure 11. Eoss vs. Drain to Source Voltage
28
1.0
0.5
-80
*Notes:
1. VGS = 10V
2. ID = 26A
-40 0
40 80 120 160
TJ, Junction Temperature [oC]
Figure 10. Maximum Drain Current
vs. Case Temperature
60
40
20
0
25
50
75
100
125
150
TC, Case Temperature [oC]
21
14
7
0
0 100 200 300 400 500 600
VDS, Drain to Source Voltage [V]
©2013 Fairchild Semiconductor Corporation
FCH072N60F Rev. C3
4
www.fairchildsemi.com