SVD4N65F 查看數據表（PDF） - Silan Microelectronics
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SVD4N65F Datasheet PDF : 7 Pages
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SVD4N65T/SVD4N65F
THERMAL CHARACTERISTICS
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RșJC
RșJA
SVD4N65T
1.25
62.5
SVD4N65F
3.79
62.5
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted)
Parameter
Drain -Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Static Drain- Source On State
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
Test conditions
VGS=0V, ID=250µA
VDS=650V, VGS=0V
VGS=±30V, VDS=0V
VGS= VDS, ID=250µA
RDS(on) VGS=10V, ID=2A
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDS = 50 V, ID = 2 A
VDS=25V,VGS=0V,
f=1.0MHZ
VDD=325V,ID=4.0A,
RG=25Ω
(Note 2,3)
VDS=520V,ID=4.0A,
VGS=10V
(Note 2,3)
Min.
650
--
--
2.0
Typ.
--
--
--
--
Max.
--
10
±100
4.0
Unit
V
µA
nA
V
--
2.3 3.0
Ω
-- 5.34 --
S
-- 556 710
--
50
80 pF
--
3
11
--
20
30
-- 19.3 80
ns
-- 128 180
--
20
90
-- 15.8 20
--
3.5
--
nC
--
5.6
--
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Parameter
Symbol
Test conditions
Continuous Source Current
IS
Integral Reverse P-N
Pulsed Source Current
Junction Diode in the
ISM
MOSFET
Diode Forward Voltage
VSD IS=4.0A,VGS=0V
Reverse Recovery Time
Trr
IS=4.0A,VGS=0V,
Reverse Recovery Charge
Qrr dIF/dt=100A/µs
Notes:
1. L=27.5mH,IAS=4.0A,VDD=50V,RG=25Ω,starting TJ=25°C;
2. Pulse Test: Pulse width 300ȝs,Duty cycle2%;
3. Essentially independent of operating temperature.
Min.
--
--
Typ. Max.
--
4.0
--
16
Unit
A
--
--
1.4
V
--
300
--
ns
--
2.2
--
µC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.3
2009.07.09
Page 2 of 7
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