20N50 查看數據表（PDF） - Unisonic Technologies
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20N50 Datasheet PDF : 4 Pages
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20N50
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
500
V
Gate-Source Voltage
VGSS
±30
V
Drain Current (Note 2)
Continuous
ID
Pulsed
IDM
20
A
80
A
Avalanche Current
IAR
20
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
Repetitive (Note 4)
EAR
960
mJ
15
mJ
Power Dissipation (TC=25°C)
PD
150
W
Channel Temperature
Tch
150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Ensure that the channel temperature does not exceed 150°C.
3. VDD=90V, Tch=25°C (initial), L=4.08mH, RG=25Ω, IAR=20A.
4. Repetitive rating: pulse width limited by maximum channel temperature This transistor is an
electrostatic-sensitive device. Handle with care.
THERMAL CHARACTERISTICS THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATINGS
50
0.833
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R502-895.a
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