JANSF2N7270 查看數據表（PDF） - International Rectifier

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JANSF2N7270

500V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)

International Rectifier 

RPraed-iIarrtiaodniaCtihoanracteristics

IRHM7450, JANSR2N7270

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.

The hardness assurance program at International Rectifier is comprised of two radiation environments.

Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ

Parameter

100K Rads(Si)1 300 K- 1000K Rads (Si)2 Units

Min Max Min Max

Test Conditions

BVDSS Drain-to-Source Breakdown Voltage 500 —

500

—V

VGS(th) Gate Threshold Voltage Ã

2.0 4.0 1.25 4.5

IGSS

IGSS

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

— 100

— -100

— 100 nA

— -100

IDSS

Zero Gate Voltage Drain Current

RDS(on) Static Drain-to-Source Ã

—

50

—

50 µA

— 0.45 —

0.6 Ω

On-State Resistance (TO-3)

RDS(on) Static Drain-to-Source Ã

— 0.45

— 0.6 Ω

On-State Resistance (TO-254AA)

VSD

Diode Forward Voltage Ã

— 1.6

— 1.6 V

VGS = 0V, ID = 1.0mA

VGS = VDS, ID = 1.0mA

VGS = 20V

VGS = -20 V

VDS=80V, VGS =0V

VGS = 12V, ID = 7.0A

VGS = 12V, ID = 7.0A

VGS = 0V, IS = 11A

1. Part number IRHM7450 (JANSR2N7270)

2. Part numbers IRHM3450 (JANSF2N7270), IRHM4450 (JANSG2N7270) and IRHM8450 (JANSH2N7270)

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

Table 2. Single Event Effect Safe Operating Area

Ion

LET

Energy Range

VDS (V)

(MeV/(mg/cm2)) (MeV)

Ni

28

265

(µm)

41

@ VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V

275

275

-

-

-

400

300

200

Ni

100

0

0

-5

-10

-15

-20

VGS

Fig a. Single Event Effect, Safe Operating Area

For footnotes refer to the last page

www.irf.com

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