IRF3704ZLPBF 查看數據表（PDF） - International Rectifier

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IRF3704ZLPBF

HEXFET Power MOSFET

International Rectifier 

IRF3704Z/S/LPbF

Static @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

BVDSS

∆ΒVDSS/∆TJ

RDS(on)

VGS(th)

∆VGS(th)/∆TJ

IDSS

IGSS

gfs

Qg

Qgs1

Qgs2

Qgd

Qgodr

Qsw

Qoss

td(on)

tr

td(off)

tf

Ciss

Coss

Crss

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Gate Threshold Voltage Coefficient

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Forward Transconductance

Total Gate Charge

Pre-Vth Gate-to-Source Charge

Post-Vth Gate-to-Source Charge

Gate-to-Drain Charge

Gate Charge Overdrive

Switch Charge (Qgs2 + Qgd)

Output Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

20

–––

–––

–––

1.65

–––

–––

–––

–––

–––

48

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

0.014

6.5

9.1

2.1

-5.6

–––

–––

–––

–––

–––

8.7

2.9

1.1

2.3

2.4

3.4

5.6

8.9

38

11

4.2

1220

390

190

–––

–––

7.9

11.1

2.55

–––

V VGS = 0V, ID = 250µA

V/°C Reference to 25°C, ID = 1mA

e mΩ VGS = 10V, ID = 21A

e VGS = 4.5V, ID = 17A

V VDS = VGS, ID = 250µA

mV/°C

1.0

150

100

-100

–––

13

µA VDS = 16V, VGS = 0V

VDS = 16V, VGS = 0V, TJ = 125°C

nA VGS = 20V

VGS = -20V

S VDS = 10V, ID = 17A

–––

VDS = 10V

––– nC VGS = 4.5V

–––

ID = 17A

–––

See Fig. 16

–––

–––

–––

e nC VDS = 10V, VGS = 0V

VDD = 10V, VGS = 4.5V

–––

ID = 17A

––– ns Clamped Inductive Load

–––

–––

VGS = 0V

––– pF VDS = 10V

–––

ƒ = 1.0MHz

Avalanche Characteristics

EAS

IAR

EAR

d Parameter

Single Pulse Avalanche Energy

Ù Avalanche Current

™ Repetitive Avalanche Energy

Typ.

–––

–––

–––

Max.

36

17

5.7

Units

mJ

A

mJ

Diode Characteristics

Parameter

IS

Continuous Source Current

h Min. Typ. Max. Units

Conditions

––– ––– 67

MOSFET symbol

D

(Body Diode)

ISM

Pulsed Source Current

Ù (Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

––– ––– 260

––– ––– 1.0

––– 11 17

––– 2.3 3.5

A showing the

integral reverse

G

e p-n junction diode.

S

V TJ = 25°C, IS = 17A, VGS = 0V

e ns TJ = 25°C, IF = 17A, VDD = 10V

nC di/dt = 100A/µs

2

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