K2616 查看數據表（PDF） - SANYO -> Panasonic

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产品描述 (功能)

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K2616

N-Channel Silicon MOSFET

SANYO -> Panasonic 

2SK2616

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Symbol

VDSS

VGSS

ID

IDP

Allowable Power Dissipation

PD

Channel Temperature

Tch

Storage Temperature

Tstg

Tc=25˚C

Conditions

Electrical Characteristics at Ta = 25˚C

Parameter

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source ON-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

Diode Forward Voltage

Symbol

Conditions

V(BR)DSS

IDSS

IGSS

VGS(off)

| yfs |

RDS(on)

Ciss

Coss

Crss

Qg

td(on)

tr

td(off)

tf

VSD

ID=1mA, VGS=0

VDS=500V, VGS=0

VGS=±30V, VDS=0

VDS=10V, ID=1mA

VDS=10V, ID=1A

ID=1A, VGS=15V

VDS=20V, f=1MHz

VDS=20V, f=1MHz

VDS=20V, f=1MHz

VDS=200V, ID=2A, VGS=10V

See specified Test Circuit

See specified Test Circuit

See specified Test Circuit

See specified Test Circuit

IS=2A, VGS=0

Switching Time Test Circuit

VGS

15V

0V

PW=1µs

D.C.≤0.5%

VGS=15V

VDD=200V

ID=1A

RL=200Ω

D

VOUT

G

RGS

S

2SK2616

P.G

50Ω

Ratings

Unit

500 V

±30 V

2A

8A

1W

30 W

150 ˚C

–55 to +150 ˚C

Ratings

Unit

min typ max

500

V

1.0 mA

±100 nA

3.5

5.5 V

0.55

1.1

S

3.0

4.0 Ω

300

pF

100

pF

50

pF

8

nC

10

ns

13

ns

20

ns

17

ns

1.2 V

No.5620–2/4

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