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NNCD10C 查看數據表(PDF) - NEC => Renesas Technology

零件编号
产品描述 (功能)
生产厂家
NNCD10C
NEC
NEC => Renesas Technology NEC
NNCD10C Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
NNCD3.3C to NNCD12C
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
Type Number
Breakdown VoltageNote 1
VBR (V)
Dynamic
ImpedanceNote 2
Zz ()
Reverse Leakage
IR (µA)
MIN. MAX. IT (mA) MAX. IT (mA) MAX. VR (V)
NNCD3.3C
3.10 3.50
5
130
5
NNCD3.6C
3.40 3.80
5
130
5
NNCD3.9C
3.70 4.10
5
130
5
NNCD4.3C
4.00 4.49
5
130
5
NNCD4.7C
4.40 4.92
5
130
5
NNCD5.1C
4.82 5.39
5
130
5
NNCD5.6C
5.29 5.94
5
80
5
NNCD6.2C
5.84 6.55
5
50
5
NNCD6.8C
6.44 7.17
5
30
5
NNCD7.5C
7.03 7.87
5
30
5
NNCD8.2C
7.73 8.67
5
30
5
NNCD9.1C
8.53 9.58
5
30
5
NNCD10C
9.42 10.58
5
30
5
NNCD11C
10.40 11.60
5
30
5
NNCD12C
11.38 12.64
5
35
5
20
1.0
10
1.0
10
1.0
10
1.0
10
1.0
5
1.5
5
2.5
5
3.0
2
3.5
2
4.0
2
5.0
2
6.0
2
7.0
2
8.0
2
9.0
Capacitance
Ct (pF)
TYP.
220
210
200
180
170
160
140
120
110
90
90
90
80
70
70
TEST
CONDITION
VR = 0 V
f = 1 MHz
E.S.D Voltage
(kV)
MIN.
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
TEST
CONDITION
C = 150 pF
R = 330
(IEC1000
-4-2)
Notes 1. Tested with pulse (40 ms)
2. Zz is measured at IT give a small A.C. signal.
2

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