MMBZ12VALDG 查看數據表（PDF） - NXP Semiconductors.

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MMBZ12VALDG

Double ESD protection diodes for transient overvoltage suppression

NXP Semiconductors. 

MMBZxVAL series

Double ESD protection diodes for transient overvoltage

suppression

Rev. 01 — 1 September 2008

Product data sheet

1. Product profile

1.1 General description

Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a common

anode configuration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted

Device (SMD) plastic package. The devices are designed for ESD and transient

overvoltage protection of up to two signal lines.

Table 1. Product overview

Type number[1]

Package

NXP

MMBZ12VAL

SOT23

MMBZ15VAL

MMBZ18VAL

MMBZ20VAL

MMBZ27VAL

MMBZ33VAL

JEDEC

TO-236AB

[1] All types available as /DG halogen-free version.

Configuration

dual common anode

1.2 Features

I Unidirectional ESD protection of

I ESD protection up to 30 kV (contact

two lines

discharge)

I Bidirectional ESD protection of one line I IEC 61000-4-2; level 4 (ESD)

I Low diode capacitance: Cd ≤ 140 pF I IEC 61643-321

I Rated peak pulse power: PPPM ≤ 40 W I AEC-Q101 qualified

I Ultra low leakage current: IRM ≤ 5 nA

1.3 Applications

I Computers and peripherals

I Audio and video equipment

I Cellular handsets and accessories

I Automotive electronic control units

I Portable electronics

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