MMBZ12VALDG 查看數據表（PDF） - NXP Semiconductors.
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MMBZ12VALDG Datasheet PDF : 15 Pages
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NXP Semiconductors
MMBZxVAL series
Double ESD protection diodes for transient overvoltage suppression
103
PPPM
(W)
102
006aab320
1.2
PPPM
PPPM(25°C)
0.8
006aab321
10
0.4
1
10−2
10−1
1
10
102
103
tp (ms)
Fig 3.
MMBZ27VAL: unidirectional and bidirectional
Tamb = 25 °C
Rated peak pulse power as a function of
exponential pulse duration (rectangular
waveform); typical values
100
Cd
(pF)
80
006aab322
60
40
(1)
(2)
20
(3)
(4)
0
0
5
10
15
20
25
VR (V)
f = 1 MHz; Tamb = 25 °C
(1) MMBZ15VAL: unidirectional
(2) MMBZ15VAL: bidirectional
(3) MMBZ27VAL: unidirectional
(4) MMBZ27VAL: bidirectional
Fig 5. Diode capacitance as a function of reverse
voltage; typical values
0
0
50
100
150
200
Tj (°C)
Fig 4.
Relative variation of rated peak pulse power as
a function of junction temperature; typical
values
102
IRM
(nA)
10
006aab323
1
10−1
10−2
10−3
−75
−25
25
75
MMBZ27VAL: VRWM = 22 V
125
175
Tamb (°C)
Fig 6. Reverse leakage current as a function of
ambient temperature; typical values
MMBZXVAL_SER_1
Product data sheet
Rev. 01 — 1 September 2008
© NXP B.V. 2008. All rights reserved.
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