MMBZ12VALDG 查看數據表（PDF） - NXP Semiconductors.
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MMBZ12VALDG Datasheet PDF : 15 Pages
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NXP Semiconductors
MMBZxVAL series
Double ESD protection diodes for transient overvoltage suppression
I
IPPM
IPP
−VCL −VBR −VRWM
−+
P-N
−IRM
−IR
V
IR
−VCL −VBR −VRWM
IRM
−IRM
−IR
VRWM VBR VCL
−
+
−IPP
−IPPM
006aab324
Fig 7. V-I characteristics for a unidirectional
ESD protection diode
−IPP
−IPPM
006aab325
Fig 8. V-I characteristics for a bidirectional
ESD protection diode
8. Application information
The MMBZxVAL series is designed for the protection of up to two unidirectional data or
signal lines from the damage caused by ESD and surge pulses. The devices may be used
on lines where the signal polarities are either positive or negative with respect to ground.
The devices provide a surge capability of 40 W per line for a 10/1000 µs waveform.
line 1 to be protected
line 2 to be protected
MMBZxVAL
GND
line 1 to be protected
MMBZxVAL
GND
unidirectional protection
of two lines
bidirectional protection
of one line
006aab326
Fig 9. Typical application: ESD and transient voltage protection of data lines
MMBZXVAL_SER_1
Product data sheet
Rev. 01 — 1 September 2008
© NXP B.V. 2008. All rights reserved.
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