FP304 查看數據表（PDF） - SANYO -> Panasonic

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FP304

TR:NPN Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode

SANYO -> Panasonic 

FP304

Continued from preceding page.

Electrical Characteristics at Ta=25˚C

Parameter

[TR]

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Gain-Bandwidth Product

Output Capacitance

C-E Saturation Voltage

B-E Saturation Voltage

C-B Breakdown Voltage

C-E Breakdown Voltage

E-B Breakdown Voltage

[SBD]

Reverse Voltage

Forward Voltage

Reverse Current

Interterminal Capacitance

Reverse Recovery Time

Thermal Resistance

Marking:304

Symbol

Conditons

ICBO

IEBO

hFE1

hFE2

fT

Cob

VCE(sat)

VBE(sat)

V(BR)CBO

V(BR)CEO

V(BR)EBO

VCB=20V, IE=0

VEB=4V, IC=0

VCE=2V, IC=500mA

VCE=2V, IC=3A

VCE=10V, IC=50mA

VCB=10V, f=1MHz

IC=3A, IB=60mA

IC=3A, IB=60mA

IC=10µA, IE=0

IC=1mA, RBE=∞

IE=10µA, IC=0

VR

VF

IR

C

trr

Rthj-a

IR=300µA

IF=700mA

VR=15V

VR=10V, f=1MHz

IF=IR=100mA, See sepcified Test Circuit.

Mounted on ceramic board (250mm2×0.8mm)

Ratings

Unit

min

typ

max

0.1 µA

0.1 µA

200

140

200

MHz

30

pF

0.3

0.4 V

0.95 1.35 V

30

V

10

V

6

V

30

V

0.55 V

80 µA

28

pF

10 ns

170

˚C/W

No.4926-2/4

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