MTW14N50E 查看數據表（PDF） - Motorola => Freescale

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MTW14N50E

TMOS POWER FET 14 AMPERES 500 VOLTS RDS(on) = 0.40 OHM

Motorola => Freescale 

MTW14N50E

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0 V, ID = 250 µAdc)

Temperature Coefficient (Positive)

V(BR)DSS

500

—

Zero Gate Voltage Drain Current

(VDS = 500 Vdc, VGS = 0)

(VDS = 500 Vdc, VGS = 0, TJ = 125°C)

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

IDSS

—

—

IGSS

—

ON CHARACTERISTICS*

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Temperature Coefficient (Negative)

VGS(th)

2.0

—

Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 7.0 Adc)

Drain–Source On–Voltage (VGS = 10 Vdc)

(ID = 14 Adc)

(ID = 7.0 Adc, TJ = 125°C)

Forward Transconductance (VDS = 15 Vdc, ID = 7.0 Adc)

RDS(on)

—

VDS(on)

—

—

gFS

5.0

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS* ¦

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

Gate Charge

(VDS = 25 Vdc, VGS = 0,

f = 1.0 MHz)

(VDD = 250 Vdc, ID = 14 Adc,

VGS = 10 Vdc,

RG = 4.7 Ω)

(VDS = 400 Vdc, ID = 14 Adc,

VGS = 10 Vdc)

Ciss

—

Coss

—

Crss

—

td(on)

—

tr

—

td(off)

—

tf

—

QT

—

Q1

—

Q2

—

Q3

—

SOURCE–DRAIN DIODE CHARACTERISTICS*

Forward On–Voltage

(IS = 14 Adc, VGS = 0)

VSD

—

(IS = 14 Adc, VGS = 0, TJ = 125°C)

—

Reverse Recovery Time

Reverse Recovery Stored Charge

(IS = 14 Adc, VGS = 0,

dIS/dt = 100 A/µs, VGS = 0)

trr

—

ta

—

tb

—

QRR

—

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the drain lead 0.25″ from package to center of die)

LD

—

Internal Source Inductance

LS

—

(Measured from the source lead 0.25″ from package to source bond pad)

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

¦ Switching characteristics are independent of operating junction temperature.

Typ

—

520

—

—

—

3.2

7.0

0.32

—

—

—

2510

280

67

28

80

80

60

65

17

47

34

1.0

0.9

390

245

145

5.35

5.0

13

Max

Unit

—

—

250

1000

100

Vdc

mV/°C

µAdc

nAdc

4.0

Vdc

—

mV/°C

0.40

Ohm

Vdc

6.7

5.6

—

mhos

3510

pF

392

94

60

ns

160

160

120

85

nC

—

—

—

1.6

Vdc

—

—

ns

—

—

—

µC

—

nH

—

nH

2

Motorola TMOS Power MOSFET Transistor Device Data

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