FDB33N25TM 查看數據表（PDF） - Fairchild Semiconductor
零件编号
产品描述 (功能)
生产厂家
FDB33N25TM Datasheet PDF : 8 Pages
| |||
Package Marking and Ordering Information
Device Marking
FDB33N25
Device
FDB33N25TM
Package
D2-PAK
Reel Size
330mm
Tape Width
24mm
Quantity
800
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min.
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
250
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250µA, Referenced to 25°C
--
IDSS
Zero Gate Voltage Drain Current
VDS = 250V, VGS = 0V
--
VDS = 200V, TC = 125°C
--
IGSSF
Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V
--
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
3.0
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10V, ID = 16.5A
--
gFS
Forward Transconductance
Dynamic Characteristics
VDS = 40V, ID =16.5A
(Note 4) --
Ciss
Input Capacitance
VDS = 25V, VGS = 0V,
--
Coss
Output Capacitance
f = 1.0MHz
--
Crss
Reverse Transfer Capacitance
--
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 125V, ID = 33A
RG = 25Ω
VDS = 200V, ID = 33A
VGS = 10V
Drain-Source Diode Characteristics and Maximum Ratings
--
--
--
(Note 4, 5)
--
--
--
(Note 4, 5)
--
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0V, IS = 33A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 33A
dIF/dt =100A/µs
--
--
--
--
(Note 4)
--
Typ.
--
0.25
--
--
--
--
--
0.077
26.6
1640
330
39
35
230
75
120
36.8
10
17
--
--
--
220
1.71
Max Units
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
5.0
V
0.094 Ω
--
S
2135 pF
430 pF
59
pF
80
ns
470 ns
160 ns
250 ns
48
nC
--
nC
--
nC
33
A
132
A
1.4
V
--
ns
--
µC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1.35mH, IAS = 33A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 33A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDB33N25 Rev A
2
www.fairchildsemi.com
Share Link: 