FDB33N25 查看數據表（PDF） - Fairchild Semiconductor
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FDB33N25 Datasheet PDF : 8 Pages
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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
-100
※ Notes :
1. VGS = 0 V
2. ID = 250 µA
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1. VGS = 10 V
2. ID = 16.5 A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 10. Maximum Drain Current
vs. Case Temperature
102
101
100
10-1
100
Operation in This Area
is Limited by R DS(on)
10 µs
100 µs
1 ms
10 ms
100 ms
DC
※ Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101
102
VDS, Drain-Source Voltage [V]
40
30
20
10
0
25
50
75
100
125
150
℃ TC, Case Temperature [ ]
Figure 11. Transient Thermal Response Curve
100
D = 0 .5
1 0 -1
0.2
0.1
0.05
0.02
0.01
1 0 -2
single pulse
PDM
t1
t2
※ Notes :
℃ 1. Z θ JC(t) = 0.53 /W M ax.
2. Duty Factor, D =t1/t2
3 . T JM - T C = P DM * Z θ JC(t)
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, Square W ave Pulse Duration [sec]
FDB33N25 Rev A
4
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