DTC144VKA 查看數據表（PDF） - ROHM Semiconductor
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DTC144VKA Datasheet PDF : 1 Pages
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Transistors
DTC144VUA / DTC144VKA / DTC144VSA
Digital transistor (built-in resistors)
DTC144VUA / DTC144VKA / DTC144VSA
!Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors.
2) The bias resistors consist of thin-film resistors with
complete isolation to allow negative biasing of the
input, and parasitic effects are almost completely
eliminated.
3) Only the on / off conditions need to be set for
operation, making device design easy.
4) Higher mounting densities can be achieved.
!Equivalent circuit
R1
IN
R2
IN
OUT
GND
GND
OUT
!External dimensions (Units : mm)
DTC144VUA
ROHM : UMT3
EIAJ : SC-70
DTC144VKA
1.25
2.1
0.1to0.4
(1) Emitter(Source)
(2) Base(Gate)
(3) Collector(Drain)
Each lead has same dimensions
ROHM : SMT3
EIAJ : SC-59
DTC144VSA
0.3to0.6
1.6
2.8
(1) Emitter(Source)
(2) Base(Gate)
(3) Collector(Drain)
Each lead has same dimensions
4
2
ROHM : SPT
EIAJ : SC-72
0.45
2.5
5
(1) (2) (3)
0.5 0.45
(1) Emitter
(2) Collector
(3) Base
Taping specifications
!Absolute maximum ratings (Ta = 25°C)
Parameter
Supply voltage
Input voltage
Output curren
Power
DTC144VUA / DTC144VKA
dissipation DTC144VSA
Junction temperature
Storage temperature
Symbol
VCC
VI
IO
IC(Max.)
Pd
Tj
Tstg
Limits
50
−15~+40
30
100
200
300
150
−55~+150
Unit
V
V
mA
mW
°C
°C
!Packaging, marking and packaging specifications
Type
Package
Marking
Packaging code
Basic ordering unit (pieces)
DTC144VUA
UMT3
166
T106
3000
DTC144VKA
SMT3
E66
T146
3000
DTC144VSA
SPT
−
TP
5000
!Electrical characteristics (Ta = 25°C)
Parameter
Symbol
Min. Typ. Max. Unit
Conditions
Input voltage
Output voltage
VI(off)
VI(on)
VO(on)
−
−
1
VCC=5V , IO=100µA
V
6
−
−
VO=0.3V , IO=2mA
−
0.1
0.3
V IO=10mA , II=0.5mA
Input current
II
−
−
0.16
mA VI=5V
Output current
IO(off)
−
−
0.5
µA VCC=50V , VI=0V
DC current gain
GI
33
−
−
−
IO=5mA , VO=5V
Input resistance
R1
32.9
47
61.1
kΩ
−
Resistance ratio
R2/R1
0.17 0.21 0.26
−
−
Transition frequency
fT
−
250
−
MHz VCE=10V , IE=−5mA , f=100MHz
∗
∗ Transition frequency of the device.
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