NE3210S01-T1B 查看數據表（PDF） - NEC => Renesas Technology

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NE3210S01-T1B

X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET

NEC => Renesas Technology 

ELECTRICAL CHARACTERISTICS (TA = +25 °C)

Characteristics

Gate to Source Leak Current

Saturated Drain Current

Gate to Source Cut off Voltage

Transconductance

Noise Figure

Associated Gain

Symbol

IGSO

IDSS

VGS (off)

gm

NF

Ga

Test Conditions

VGS = –3 V

VDS = 2 V, VGS = 0 V

VDS = 2 V, IDS = 100 µA

VDS = 2 V, IDS = 10 mA

VDS = 2 V, IDS = 10 mA

f = 12 GHz

NE3210S01

MIN.

TYP.

MAX.

Unit

–

0.5

10

µA

15

40

70

mA

–0.2

–0.7

–2.0

V

40

55

–

mS

–

0.35

0.45

dB

12.0

13.5

–

dB

2

Data Sheet P14067EJ2V0DS00

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