BT151X-500R 查看數據表（PDF） - NXP Semiconductors.

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BT151X-500R

SCR

NXP Semiconductors. 

NXP Semiconductors

5. Pinning information

Table 2. Pinning information

Pin

Symbol Description

1

K

cathode

2

A

anode

3

G

gate

mb

n.c.

mounting base; isolated

Simplified outline

mb

BT151X-500R

SCR

Graphic symbol

A

K

G

sym037

1 23

TO-220F (SOT186A)

6. Ordering information

Table 3. Ordering information

Type number

Package

Name

BT151X-500R

TO-220F

Description

plastic single-ended package; isolated heatsink mounted; 1

mounting hole; 3-lead TO-220 "full pack"

Version

SOT186A

7. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

VDRM

repetitive peak off-state voltage

VRRM

repetitive peak reverse voltage

IT(AV)

average on-state current

half sine wave; Th ≤ 69 °C

IT(RMS)

RMS on-state current

half sine wave; Th ≤ 69 °C; Fig. 1;

Fig. 2; Fig. 3

ITSM

non-repetitive peak on-state half sine wave; Tj(init) = 25 °C;

current

tp = 10 ms; Fig. 4; Fig. 5

half sine wave; Tj(init) = 25 °C;

tp = 8.3 ms

I2t

I2t for fusing

tp = 10 ms; SIN

dIT/dt

rate of rise of on-state current IT = 20 A; IG = 50 mA; dIG/dt = 50 mA/

µs

IGM

BT151X-500R

peak gate current

All information provided in this document is subject to legal disclaimers.

Product data sheet

15 March 2014

Min Max Unit

-

500 V

-

500 V

-

7.5 A

-

12

A

-

120 A

-

132 A

-

72

A2s

-

50

A/µs

-

2

A

© NXP Semiconductors N.V. 2014. All rights reserved

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