MTW16N40ED 查看數據表（PDF） - ON Semiconductor
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MTW16N40ED Datasheet PDF : 8 Pages
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MTW16N40E
TYPICAL ELECTRICAL CHARACTERISTICS
30
TJ = 25°C VGS = 10 V
8V
25
7V
20
6.5 V
40
VDS = 50 V
35
30
25
15
6V
20
15
10
10
5
4.5 V
5
0
0
0 2 4 6 8 10 12 14 16 18 20
0
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
100°C
25°C
TJ = −55°C
2
4
6
8
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.75
VGS = 10 V
0.6
0.45
0.3
TJ = 100°C
25°C
0.15
− 55°C
0
0
5
10
15
20
25
30
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
and Temperature
0.32
TJ = 25°C
0.30
0.28
0.26
VGS = 10 V
0.24
0.22
15 V
0.20
0
4
8 12 16 20 24 28 32
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
3.0
1000
VGS = 10 V
2.5 ID = 8 A
2.0
100
1.5
1.0
10
0.5
0
−50 −25
0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
1.0
150
0
Figure 5. On−Resistance Variation with
Temperature
TJ = 125°C
100°C
VGS = 0 V
50 100 150 200 250 300 350 400
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−To−Source Leakage
Current versus Voltage
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