MTB20N20E 查看數據表（PDF） - Motorola => Freescale

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MTB20N20E

TMOS POWER FET 20 AMPERES 200 VOLTS RDS(on) = 0.16 OHM

Motorola => Freescale 

MTB20N20E

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)

Temperature Coefficient (Positive)

V(BR)DSS

200

—

—

263

—

Vdc

—

mV/°C

Zero Gate Voltage Drain Current

(VDS = 200 Vdc, VGS = 0 Vdc)

(VDS = 200 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

µAdc

—

—

10

—

—

100

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

IGSS

—

—

100

nAdc

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Temperature Coefficient (Negative)

VGS(th)

2.0

—

4.0

Vdc

—

7.0

—

mV/°C

Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 10 Adc)

Drain–Source On–Voltage (VGS = 10 Vdc)

(ID = 20 Adc)

(ID = 10 Adc, TJ = 125°C)

Forward Transconductance (VDS = 13 Vdc, ID = 10 Adc)

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

SWITCHING CHARACTERISTICS (2)

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

Gate Charge

(See Figure 8)

(VDD = 100 Vdc, ID = 20 Adc,

VGS = 10 Vdc,

RG = 9.1 Ω)

(VDS = 160 Vdc, ID = 20 Adc,

VGS = 10 Vdc)

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage (1)

(IS = 20 Adc, VGS = 0 Vdc)

(IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C)

RDS(on)

VDS(on)

gFS

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

QT

Q1

Q2

Q3

VSD

—

0.12

0.16

Ohm

Vdc

—

—

3.84

—

—

3.36

8.0

11

—

mhos

—

1880

2700

pF

—

378

535

—

68

100

—

17

40

ns

—

86

180

—

50

100

—

60

120

—

54

75

nC

—

12

—

—

24

—

—

22

—

Vdc

—

1.0

1.35

—

0.82

—

Reverse Recovery Time

(See Figure 14)

(IS = 20 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

Reverse Recovery Stored Charge

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the drain lead 0.25″ from package to center of die)

trr

ta

tb

QRR

LD

—

239

—

ns

—

136

—

—

103

—

—

2.09

—

µC

—

4.5

—

nH

Internal Source Inductance

LS

(Measured from the source lead 0.25″ from package to source bond pad)

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

—

7.5

—

nH

2

Motorola TMOS Power MOSFET Transistor Device Data

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