6A05 查看數據表（PDF） - Naina Semiconductor ltd.
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6A05 Datasheet PDF : 2 Pages
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Naina Semiconductor Ltd.
Silicon Rectifier, 6.0A
Features
• Diffused junction
• Low cost
• Low reverse leakage current
• High current capability & low forward voltage drop
• Plastic material carrying UL recognition 94V-0
• Polarity: Color Band denotes Cathode
• Lead free finish
6A05 - 6A10
Thermal and Mechanical Specifications (TA = 250C unless otherwise
specified)
Parameters
Symbol Values Units
Maximum operating junction
temperature range
TJ
-55 to
0C
+150
Maximum storage temperature range TStg
-55 to
+150
0C
Typical thermal resistance junction to
ambient
RθJA
10
0C/W
Approximate weight
W
2.1
g
JEDEC R-6
Electrical Characteristics (TA = 250C unless otherwise specified)
Parameter
Symbol 6A05 6A1 6A2 6A4 6A6 6A8 6A10
Maximum repetitive peak reverse
voltage
VRRM
50 100 200 400 600 800 1000
Maximum RMS voltage
VRMS
35 70 140 280 420 560 700
Maximum DC blocking voltage
VDC
50 100 200 400 600 800 1000
Maximum average forward output
current @ TA = 500C
IF(AV)
6.0
Peak forward surge current (8.3ms)
single half sine-wave superimposed
IFSM
400
on rated load
Maximum DC forward voltage drop
per element @ 10 A
VF
0.9
Typical junction capacitance
CJ
150
Maximum DC reverse
TA = 250C
10
current at rated DC
IR
blocking voltage
TA = 1000C
100
Units
V
V
V
A
A
V
pF
µA
1
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
sales@nainasemi.com • www.nainasemi.com
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