Q67000-S068 查看數據表（PDF） - Infineon Technologies

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Q67000-S068

SIPMOS® Small-Signal Transistor

Infineon Technologies 

Thermal Characteristics

Parameter

Rev. 1.0

Characteristics

Thermal resistance, junction - soldering point

(Pin 4)

SMD version, device on PCB:

@ min. footprint

@ 6 cm2 cooling area 1)

BSP297

Symbol

Values

Unit

min. typ. max.

RthJS

RthJA

-

15 25 K/W

-

80 115

-

48 70

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage

VGS=0, ID=250µA

Gate threshold voltage, VGS = VDS

ID=400µA

Zero gate voltage drain current

VDS=200V, VGS=0, Tj=25°C

VDS=200V, VGS=0, Tj=150°C

Gate-source leakage current

VGS=20V, VDS=0

Drain-source on-state resistance

VGS=4.5V, ID=0.53A

Drain-source on-state resistance

VGS=10V, ID=0.66A

V(BR)DSS 200

-

-V

VGS(th)

0.8

1.4

1.8

IDSS

IGSS

µA

-

-

0.1

-

10 100

-

1

10 nA

RDS(on)

-

1.2

3W

RDS(on)

-

1 1.8

1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

Page 2

2002-11-04

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