Q67000-S068 查看數據表（PDF） - Infineon Technologies
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Q67000-S068 Datasheet PDF : 8 Pages
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Rev. 1.0
BSP297
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min. typ. max.
Dynamic Characteristics
Transconductance
gfs
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS³2*ID*RDS(on)max,
ID=0.53A
VGS=0, VDS=25V,
f=1MHz
VDD=100V, VGS=4.5V,
ID=0.6A, RG=15W
0.47 0.94 - S
- 286 357 pF
-
38 47
- 15.7 23.5
-
5.2 7.8 ns
-
3.8 5.7
-
49 74
-
19 29
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Qgs
Qgd
Qg
VDD=160V, ID=0.66A
VDD=160V, ID=0.66A,
VGS=0 to 10V
-
0.7 0.9 nC
-
5.2 7.8
- 12.9 16.1
Gate plateau voltage
V(plateau) VDD=160V, ID = 0.66 A
-
2.7 3.3 V
Reverse Diode
Inverse diode continuous
IS
forward current
Inv. diode direct current, pulsed ISM
Inverse diode forward voltage VSD
Reverse recovery time
trr
Reverse recovery charge
Qrr
TA=25°C
VGS=0, IF = IS
VR=100V, IF=lS,
diF/dt=100A/µs
-
- 0.66 A
-
- 2.64
- 0.84 1.2 V
-
52 78 ns
-
80 120 nC
Page 3
2002-11-04
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